![]() Gallium nitride transistors can then be operated with reduced dead-times which results in higher efficiency and enables passive cooling. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching applications. Gallium nitride (GaN) transistors offer fundamental advantages over silicon. ![]()
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